![Optimization of Te-doped GaAs tunnel junctions for stacking of multiple laser sections | Ferdinand-Braun-Institut Optimization of Te-doped GaAs tunnel junctions for stacking of multiple laser sections | Ferdinand-Braun-Institut](https://www.fbh-berlin.de/fileadmin/fbh-berlin/images/Research_News/2021/Optimization_of_Te-doped_GaAs_tunnel_junctions_Fig_1.jpg)
Optimization of Te-doped GaAs tunnel junctions for stacking of multiple laser sections | Ferdinand-Braun-Institut
![Temperature dependence of Hall electron mobility for GaAs (squares),... | Download Scientific Diagram Temperature dependence of Hall electron mobility for GaAs (squares),... | Download Scientific Diagram](https://www.researchgate.net/publication/231072864/figure/fig1/AS:393599016554499@1470852726285/Temperature-dependence-of-Hall-electron-mobility-for-GaAs-squares-GaAsN-circles.png)
Temperature dependence of Hall electron mobility for GaAs (squares),... | Download Scientific Diagram
![Phonon Controlled Temperature Dependence of Electron Mobility in 2DEG of GaAs Surface Layer | Semantic Scholar Phonon Controlled Temperature Dependence of Electron Mobility in 2DEG of GaAs Surface Layer | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/5a6e28a31ee6c4ac235cac4ebc5c116211578030/6-Figure2-1.png)
Phonon Controlled Temperature Dependence of Electron Mobility in 2DEG of GaAs Surface Layer | Semantic Scholar
![SOLVED: a. Consider n-type GaAs at T=300 K doped to a concentration of Na=2.101 cm^3. Assume electron mobility n of 6800 cm^2/V-s and hole mobility p of 300 cm^2/V-s. a. Determine the SOLVED: a. Consider n-type GaAs at T=300 K doped to a concentration of Na=2.101 cm^3. Assume electron mobility n of 6800 cm^2/V-s and hole mobility p of 300 cm^2/V-s. a. Determine the](https://cdn.numerade.com/ask_images/480c6e9846154185b0a483c16315b8bd.jpg)